一、个人简介

艾威，中山大学柔性电子学院博士后，天津工业大学无机非金属材料工程学士，南开大学材料物理与化学博士。目前以第一作者/共同第一作者的身份在Nature Communications (1)、National Science Review (1)、Nano Letters (1)、Angewandte Chemie International Edition (1) 上发表研究论文4篇，累计发表SCI论文13篇。

 

二、研究领域

高迁移率二维材料体系的可控制备、新奇物性探究及微纳器件应用

 

三、教育背景

2020.09-2026.06，南开大学，材料物理与化学，博士

2015.09-2019.06，天津工业大学，无机非金属材料工程，学士

 

四、工作经历

2026.07-至今，中山大学，柔性电子学院，电子科学与技术，博士后

 

五、部分代表性成果

  1. Ai W.#, Luo X.#, Liu Z., Deng Y., Lv Z., He Y., Li L., Fu X., Luo F.*, Wang J.*, Zhao J.*, Wu J.*. Transport signatures of gate-tunable topological phase transition in ultrathin β-Ag2Te. Natl. Sci. Rev., 2026, 13: nwag229.
  2. Ai W.#, Chen F.#, Liu Z., Yuan X., Zhang L., He Y., Dong X., Fu H.*, Luo F.*, Deng M.*, Wu J.*. Observation of giant room-temperature anisotropic magnetoresistance in β-Ag2Te topological insulator. Nat. Commun., 2024, 15: 1259.
  3. Ai W., Chen J., Dong X., Gao Z., He Y., Liu Z., Fu H., Luo F., Wu J.*. High mobility and quantum oscillations in semiconducting Bi2O2Te nanosheets grown by chemical vapor deposition. Nano Lett., 2022, 18, 7659.
  4. Li Y.#; Li J.#; Ai W.#, Chen J., Lu T., Liao X., Wang W., Huang R., Chen Z., Wu J.*, Cheng F.*, Wang H.*. Sequentially regulating potential-determining step for lowering CO2 electroreduction overpotential over Te-doped Bi nanotips. Angew. Chem. Int. Ed, 2024, 63, e202407772.
  5. Zhang L., Liu Z., Ai W., Chen J., Lv Z., Wang B., Yang M., Luo F., Wu J.*. Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with sub-nanometre capacitance-equivalent thicknesses. Nat. Electron., 2024, 7, 662.
  6. Liu Z., Chen J., Ai W., Chen S., He Y., Lv Z., Yang M., Li W., Luo F.*, Wu J.*. Wafer-scale evaporated metallic BiOx as contact electrodes of MoS2 transistors with enhanced thermal stability. Chem. Mater., 2025, 37, 2836.
  7. Wang B., He Y., Chen W., Lv Z., Liu Z., Hou Y., Ai W., Chen J., Yang M., Xie S., Chen T., Yue Z.*, Luo F.*. Vertical growth of ultrathin Bi2WO6 nanosheets for visual optoelectronic neuromorphic devices. Small, 2026, 22, e73259.
  8. He Y., Lv Z., Liu Z., Yang M., Ai W., Chen J., Chen W., Wang B., Fu X., Luo F., Wu J.*. Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics. Nat. Common., 2025, 16, 5904.
  9. Chen X.#, Zhang Y.#, Yu Y.#, Huang Y.#, Guo J., Ai W., Qiu M., Jia Y., Tang W., Liu F., Feng M., Gao C., Deng S., Wu J., Fu X.*. Imaging photocarrier dynamics in schottky junction interface by scanning ultrafast electron microscopy. Nano Lett., 2025, 25, 11586.
  10. Yao R., Liu Z., Ma Y., Xu L., He Y., Ai W., Li Y., Lu F., Dong H., Gao Z.*, Wang W.*, Luo F.*. Controlled synthesis of 2D ferromagnetic/antiferromagnetic Cr7Te8/MnTe vertical heterostructures for high-tunable coercivity. ACS Nano, 2024, 18, 23508.
  11. Gao Z.*, Xin B., Chen J., Liu Z., Yao R., Ai W., He Y., Xu L., Chen T., Wang W.*, Luo F.*. Above-room-temperature ferromagnetism in copper-doped two-dimensional chromium-based nanosheets. ACS Nano, 2024, 18, 703.
  12. He Y., Xu Q., Dong X., Liu J., Li L., Wang B., Chen J., Zhang L., Gao Z., Ai W., Liu Z., Zhou Z.*, Xu W., Fu H., Luo F., Wu J.*. The discovery of a high-mobility two-dimensional bismuth oxyselenide semiconductor and its application in nonvolatile neuromophic device. ACS Nano, 2023, 17, 10783.

Gao Z.#, Tang M.#, Huang J.#, Chen J., Ai W., Wu L., Dong X., Ma Y., Zhang Z., Zhang L., Du Y., Fu H., Yuan H.*, Wu J.*, Luo F.*. Near room-temperature ferromagnetism in air-stable two-dimensional Cr1-xTe grown by chemical vapor deposition. Nano Res., 2022, 15, 3763.