一、个人简介

王经纬，中山大学（深圳）柔性电子学院副教授，博士生导师，博士后合作导师。主要从事二维材料的可控生长、应变调控及柔性电子器件研究。迄今已在Nat. Electron.、Nat. Commun.、Adv. Mater.、J. Am. Chem. Soc.、Angew. Chem.、Matter、ACS Nano等高水平学术期刊上发表论文50余篇，主持基金委面上项目、青年科学基金、广东省和深圳市面上等多个项目，作为重要成员参与科技部重点研发等重大项目，担任Adv. Powder Mater. (IF:28.6)、Exploration、Metalmat等期刊的青年编委，入选深圳市海外高层次人才、清华大学“水木学者”（高层次青年人才培养计划）、清华大学十佳优秀博士后。

 

  1. 团队经费充足，平台资源丰富，长期招聘博士后，提供优厚待遇和发展机遇；
  2. 长期招收访问学者及联合培养研究生，表现优异者可留组或推荐出国深造；
  3. 欢迎各位老师推荐优秀学生报考硕士和博士研究生，也欢迎有科研志向的学生主动自荐。

电子邮箱：wangjingwei@mail.sysu.edu.cn

 

二、研究领域


二维材料生长：二维晶体生长、表界面调控、大面积高质量晶体生长
应变结构精准构筑：褶皱调控机制、局部应变诱导新奇物性
新原理器件：无线能量收集器、神经形态器件、柔性晶体管等

 

三、教育与工作背景

2025.01-至今   中山大学柔性电子学院，副教授，博士生导师

2022.12-2024.12 清华大学深圳国际研究生院，材料研究院，水木学者（合作PI：刘碧录教授）

2020.11-2022.11 清华-伯克利深圳学院，盖姆石墨烯中心，博士后（合作PI：刘碧录教授）

2016.09-2020.09 香港科技大学，纳米科学与技术，博士（导师: 王宁教授，程春教授）

2012.11-2015.03 德国弗莱堡大学，晶体材料，硕士（导师: Michael Fiederle教授）

2008.09-2012.07  暨南大学，材料科学与工程，学士

 

四、科研项目

主持：

  1. 国家自然科学基金面上项目，2025.01-2028.12
  2. 国家自然科学基金青年科学基金，2022.01-2022.12
  3. 中国博士后基金面上项目，2021.09-2022.09
  4. 广东省自然科学基金面上项目，2023.01-2025.12
  5. 广东省攀登计划省级项目，2017.05-2018.05
  6. 深圳市自然科学基金面上项目，2024.01-2026.12
  7. 深圳市个人创客计划项目，2019.01-2020.01
  8. 清华大学“水木学者”计划，2022.11-2024.11
  9. 中山大学引进人才科研启动经费，2025.01-2028.12

 

参与：

  1. 科技部重点研发子课题，2023.05-2028.04
  2. 深圳市自然科学基金重点项目，2022.11-2025.10
  3. 深圳市自然科学基金重点项目，2020.11-2023.10
  4. 深圳市重点实验室，2023.06-2026.06

 

五、代表性论文和专利

  1. Wang, J.;  He, L.;  Tan, J.; Liu, B.*, A work-function-tunable 2D alloy for electrical contacts. Nature Electronics 2023, 6 (11), 795.
  2. Wang, J.#;  He, L.#; Zhang, Y.; Nong H.; Li S.; Wu Q.; Tan J.; Liu B.*, Locally Strained 2D Materials: Preparation, Properties, and Applications. Advanced Materials 2024, 2314145
  3. He, L.; Nong, H.; Tan, J.; Wu, Q.; Zheng, R.; Zhao, S.; Yu, Q.; Wang, J.*; Liu, B.*, Growth of 2D Cr2O3–CrN Mosaic Heterostructures with Tunable Room-Temperature Ferromagnetism. Advanced Materials 2024, 36, 2304946
  4. Zhang, Z., Wang, J.*, Zhang Y., Liu J., Sun Y., Li S., Nie J., Zhang J., Yu Q., Wang X., Liu B.*, Thermal Expansion Mismatch Driven High-Pressure Growth of 2D Non-centrosymmetric MnTeMoO6 with Giant Nonlinear Optical Properties. Matter 2025, 102247
  5. Zhang, Y.#; Wang, J.#; Chen, Y.; Wu, X.; Tan, J.; Liu, J.; Nong, H.; He, L.; Wu, Q.; Zhou, G.; Zou, X.; Liu, B.*, Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS2 Growth. Journal of the American Chemical Society 2024, 10810
  6. Wang, J.#;  Han, M.#;  Wang, Q.;  Ji, Y.;  Zhang, X.;  Shi, R.;  Wu, Z.;  Zhang, L.;  Amini, A.;  Guo, L.;  Wang, N.;  Lin, J.; Cheng, C.*, Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS Nano 2021, 15, 6633.
  7. Wang, J.;  Cai, X.;  Shi, R.;  Wu, Z.;  Wang, W.;  Long, G.;  Tang, Y.;  Cai, N.;  Ouyang, W.;  Geng, P.;  Chandrashekar, B. N.;  Amini, A.;  Wang, N.*; Cheng, C.*, Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites. ACS Nano 2018, 12, 635.
  8. Li, S.; Tan, J.; Sun, Y.; Liu, J.; Nong, H.; He, L.; Zhang, Y.; Wang, J.*; Liu, B.*, Aged-Precursor-Assisted Growth of Ferrimagnetic 2D Cr9Se13 with Anomalous Elasticity. Advanced Functional Materials 2024, 34, 2403453
  9. Zhang, Y.#; Wang, J.#; Nong, H.; He, L.; Li, S.; Wei, Q.; Wu, Q.; Liu, B.*, Atomic defects in 2D semiconductors: characterization, suppression, and repair, Advanced Functional Materials 2024, 202410402
  10. Wang, J.#;  Tan, J.#;  He, L.;  Li, Z.;  Li, S.;  Zhang, Y.;  Nong, H.;  Wu, Q.;  Yu, Q.;  Zou, X.;  Cheng, H.-M.; Liu, B.*, Facet-engineered growth of non-layered 2D manganese chalcogenides. Advanced Powder Materials 2024, 3 (2), 100164.
  11. Wang, J.#;  Luo, Y.#;  Cai, X.;  Shi, R.;  Wang, W.;  Li, T.;  Wu, Z.;  Zhang, X.;  Peng, O.;  Amini, A.;  Tang, C.;  Liu, K.;  Wang, N.; Cheng, C.*, Multiple Regulation over Growth Direction, Band Structure, and Dimension of Monolayer WS2 by a Quartz Substrate. Chemistry of Materials 2020, 32, 2508. (Cover article)
  12. 成会明，刘碧录，吴沁柯，农慧雨，王经纬，一种二维过渡金属硫化物及其制备方法和应用，发明专利
  13. 刘碧录，谭隽阳，李晟楠，王经纬，成会明，一种非层状二维材料及其制备方法与应用，发明专利

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Jing-Wei WANG

Associate Professor, School of Flexible Electronics

Research Area: 2D Materials Growth and Device Applications

Email: wangjingwei@mail.sysu.edu.cn

 

1. Brief introduction

   Dr. Wang graduated from The Hong Kong University of Science and Technology. He has held positions at the Tsinghua-Berkeley Shenzhen Institute and the Shenzhen International Graduate School of Tsinghua University. Currently, he serves as an Associate Professor and Ph.D. advisor at the School of Flexible Electronics, Sun Yat-sen University (Shenzhen). His research focuses on the controlled growth and fabrication of 2D materials, strain engineering, and their applications in flexible electronic devices.

To date, Dr. Wang has published over 50 papers in prestigious academic journals, including Nature Electronics, Nature Communications, Advanced Materials, Journal of the American Chemical Society, Angewandte Chemie, Matter, and ACS Nano. Dr. Wang has led more than 10 research grants, including those funded by the National Natural Science Foundation of China (General and Young Scientist Funds), as well as projects supported by Guangdong Province and Shenzhen Municipality. He has also been a key contributor to national-level major projects, such as the Ministry of Science and Technology's Key Research and Development Programs.

Dr. Wang serves as a Youth Editorial Board Member for Advanced Powder Materials (Impact Factor: 28.6) and Exploration. He has been recognized as a Shenzhen Overseas High-Caliber Talent, "Shuimu Scholar" at Tsinghua University, and Top-10 Outstanding Postdoctoral Fellows at Tsinghua University.

 

2. Biography:

2025.01–Present: Associate Professor School of Flexible Electronics, Sun Yat-sen University

2022.12-2024.11: "Shuimu Scholar," Shenzhen International Graduate School, Tsinghua University

2020.11-2022.11: Postdoctoral Fellow, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University

2016.09-2020.09: Ph.D. in Nano Sci & Tech, The Hong Kong University of Science and Technology

2012.11-2015.03: M.Sc. in Crystalline Materials, University of Freiburg, Germany

2008.09-2012.07: B.Eng. in Materials Science and Engineering, Jinan University (Guangzhou)

 

3. Research Interests:

  1. Controlled Growth of 2D Materials: Developing high-quality 2D materials using chemical vapor deposition (CVD), including transition metal dichalcogenides 2D transition metal nitrides, oxides, and heterostructures.
  2. Strain Engineering of 2D Materials: Achieving breakthroughs in the electrical, magnetic, mechanical, and optical properties of 2D materials through strain engineering.
  3. Novel (Flexible) 2D Electronic Devices: Designing and applying electronic devices based on strain-engineered 2D materials, such as field-effect transistors, memory devices, and nonlinear Hall effect devices.

 

4. Selected Publications

  1. Wang, J.;  He, L.;  Tan, J.; Liu, B., A work-function-tunable 2D alloy for electrical contacts. Nature Electronics 2023, 6 (11), 795.
  2. Wang, J.#;  He, L.#; Zhang, Y.; Nong H.; Li S.; Wu Q.; Tan J.; Liu B., Locally Strained 2D Materials: Preparation, Properties, and Applications. Advanced Materials 2024, 2314145
  3. He, L.; Nong, H.; Tan, J.; Wu, Q.; Zheng, R.; Zhao, S.; Yu, Q.; Wang, J.*; Liu, B.*, Growth of 2D Cr2O3–CrN Mosaic Heterostructures with Tunable Room-Temperature Ferromagnetism. Advanced Materials 2024, 36, 2304946
  4. Wang, J.#;  Han, M.#;  Wang, Q.;  Ji, Y.;  Zhang, X.;  Shi, R.;  Wu, Z.;  Zhang, L.;  Amini, A.;  Guo, L.;  Wang, N.;  Lin, J.; Cheng, C., Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS Nano 2021, 15, 6633.
  5. Wang, J.;  Cai, X.;  Shi, R.;  Wu, Z.;  Wang, W.;  Long, G.;  Tang, Y.;  Cai, N.;  Ouyang, W.;  Geng, P.;  Chandrashekar, B. N.;  Amini, A.;  Wang, N.; Cheng, C., Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites. ACS Nano 2018, 12, 635.
  6. Zhang, Y.#; Wang, J.#; Chen, Y.; Wu, X.; Tan, J.; Liu, J.; Nong, H.; He, L.; Wu, Q.; Zhou, G.; Zou, X.; Liu, B., Exclusive Generation of Single-Atom Sulfur for Ultrahigh Quality Monolayer MoS2 Growth. Journal of the American Chemical Society 2024, 10810
  7. Li, S.;  Tan, J.;  Sun, Y.;  Liu, J.;  Nong, H.;  He, L.;  Zhang, Y.;  Wang, J.*; Liu, B.*, Aged-Precursor-Assisted Growth of Ferrimagnetic 2D Cr9Se13 with Anomalous Elasticity. Advanced Functional Materials 2024, 34, 2403453
  8. Zhang, Y.#; Wang, J.#; Nong, H.; He, L.; Li, S.; Wei, Q.; Wu, Q.; Liu, B., Atomic defects in 2D semiconductors: characterization, suppression, and repair, Advanced Functional Materials 2024, 202410402
  9. Wang, J.#;  Tan, J.#;  He, L.;  Li, Z.;  Li, S.;  Zhang, Y.;  Nong, H.;  Wu, Q.;  Yu, Q.;  Zou, X.;  Cheng, H.-M.; Liu, B., Facet-engineered growth of non-layered 2D manganese chalcogenides. Advanced Powder Materials 2024, 3 (2), 100164.
  10. Wang, J.#;  Luo, Y.#;  Cai, X.;  Shi, R.;  Wang, W.;  Li, T.;  Wu, Z.;  Zhang, X.;  Peng, O.;  Amini, A.;  Tang, C.;  Liu, K.;  Wang, N.; Cheng, C., Multiple Regulation over Growth Direction, Band Structure, and Dimension of Monolayer WS2 by a Quartz Substrate. Chemistry of Materials 2020, 32, 2508. (Cover article)
  11. Wang, J.;  Li, T.;  Wang, Q.;  Wang, W.;  Shi, R.;  Wang, N.;  Amini, A.; Cheng, C., Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method. Materials Today Advances 2020, 8, 100098.
  12. Wang, J.;  Zhang, Z.;  Shi, R.;  Chandrashekar, B. N.;  Shen, N.;  Song, H.;  Wang, N.;  Chen, J.; Cheng, C., Impact of Nanoscale Roughness on Heat Transport across the Solid–Solid Interface. Advanced Materials Interfaces 2020, 7, 1901582. (Cover article)
  13. Wang, J.;  Shi, R.;  Wang, W.;  Cai, N.;  Chen, P.;  Kong, D.;  Amini, A.; Cheng, C., Directly Probing Light Absorption Enhancement of Single Hierarchical Structures with Engineered Surface Roughness. Scientific Reports 2018, 8, 12283.
  14. Zheng, R.#; Wang, J.#; Zhang, Y.; Nong, H.; Wu, Q.; Wu, K.; Tan, J,; Huang, Z.; Yu, Q.; Liu, B., Crystal Lattice Imaging of 2D Materials by Friction Force Microscopy Chinese Science Bulletin 2023, 68, 2924.
  15. Tan, J.;  Wang, J.;  Li, S.;  Nong, H.;  Zeng, S.;  Zou, X.;  Liu, B.; Cheng, H.-M., Metal-lattice-heredity synthesis of single-crystalline 2D transition metal oxides. Matter 2024.

 

6. Information for Enrollment and Recruitment

Our team has established an extensive research network within the Greater Bay Area, maintaining close collaborations with leading groups at institutions such as The University of Hong Kong, The Hong Kong University of Science and Technology, City University of Hong Kong, Shenzhen International Graduate School of Tsinghua University, Shenzhen Institute of Peking University, Southern University of Science and Technology, and the Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences. These partnerships provide opportunities for students and postdoctoral fellows to engage in academic exchanges and collaborative learning.

Within the team, members can participate in national and provincial-level major research projects in our field, ensuring rapid professional growth. With robust funding and strong research capabilities, we offer students highly competitive monthly stipends and allowances.We warmly welcome applicants with academic backgrounds in materials science, physics, electronics, chemistry, chemical engineering, information technology, energy, biology, or mechanical engineering to join our group and pursue cutting-edge research.

(1) Recruitment of postdoctoral researchers: Welcome doctoral graduates with the above backgrounds to apply for postdoctoral positions in our group. Guangdong Province, Shenzhen City, and Sun Yat-sen University will provide generous salaries and benefits for postdoctoral researchers. We support the application of research funds from the China Postdoctoral Science Foundation and the National Natural Science Foundation of China. Overseas PhD can apply for allowance from the Guangdong Province Support Program for Overseas Postdoctoral Talents.

(2) Recruitment of doctoral and master students: International students with the above backgrounds are welcome to apply. The candidates are encouraged to apply for the Chinese Government Scholarship (https://www.campuschina.org/; Sun Yat-sen University).